A novel GaAs structure for terahertz generators driven by plasma instability
- 1 October 1997
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (10) , 1331-1334
- https://doi.org/10.1088/0268-1242/12/10/001
Abstract
An GaAs structure is proposed for microwave power generation in the terahertz frequency region. The structure allows one both to realize within a mean free path distance a quasi-ballistic beam of hot electrons moving through a cold plasma and to use intervalley transfer to upper valleys as a strong mechanism for beam modulation. Kinetic energy is thus transferred from hot electrons to coherent plasma oscillations. The main features of such a generator are investigated by the Monte Carlo particle simulation.Keywords
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