Formation of n-Layer in In0.53Ga0.47As by Si Implantation
- 1 July 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (7A) , L431-433
- https://doi.org/10.1143/jjap.21.l431
Abstract
Electrical activtaion behavior of Si atoms implanted into LPE-grown In0.53Ga0.47As layer is discussed. Activation of Si atoms occurs during 500–700°C heat treatment, corresponding to the annealing out of the lattice disorders as observed by the channeling analysis. Annealing at 700°C of 1×1014 Si ions cm-2 implanted InGaAs resulted in the formation of an n-layer having a maximum electron mobility of 7000 cm2/V·s at the corresponding free electron concentration of 8×1017 cm-3, which is comparable to the data obtained for the epitaxially grown layers.Keywords
This publication has 5 references indexed in Scilit:
- A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage currentApplied Physics Letters, 1981
- Damage and reordering of ion-implanted layers of InPApplied Physics Letters, 1981
- Double heterostructure Ga0.47In0.53As MESFETs by MBEIEEE Electron Device Letters, 1980
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980
- Ion implanted photodiode detectors in epitaxial (Gax In_1-x) AsApplied Optics, 1975