In situ B-doped Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition: Physical and electrical characterization
- 1 May 1992
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (5) , 543-547
- https://doi.org/10.1007/bf02655622
Abstract
No abstract availableKeywords
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