Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation
- 15 June 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (24) , 3001-3003
- https://doi.org/10.1063/1.106789
Abstract
The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 Å. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.Keywords
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