Energy Loss of High-Density Hot Carriers in Polar Semiconductors
- 1 August 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (8R) , 1181-1183
- https://doi.org/10.1143/jjap.21.1181
Abstract
The rate of energy loss of hot carriers is calculated as a function of the carrier density by assuming that the energy loss is due to interactions with longitudinal optical phonons. It is found that for low effective mass carriers, both the screening and the Fermi degeneracy greatly reduce the energy loss even at room temperature.Keywords
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