Electron spin resonance in argon-ion-implanted silicon
- 1 September 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (9) , 4243
- https://doi.org/10.1063/1.1662935
Abstract
A new paramagnetic center with g = 2.0029 is observed, in both n- and p-type silicon after they are heavily implanted (higher than 1017 ions/cm2) with 150-keV argon ions.This publication has 6 references indexed in Scilit:
- ESR Studies on P+ Ion-Implanted SiJapanese Journal of Applied Physics, 1971
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- ELECTRON PARAMAGNETIC RESONANCE OF ION-IMPLANTED DONORS IN SILICONApplied Physics Letters, 1970
- Evidence for carbon contamination on vacuum heated surfaces by electron paramagnetic resonanceSurface Science, 1970
- ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICONApplied Physics Letters, 1969
- ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICONApplied Physics Letters, 1969