Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 668-674
- https://doi.org/10.1016/0022-0248(94)91124-x
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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