Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy
- 5 December 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (23) , 2975-2977
- https://doi.org/10.1063/1.112481
Abstract
Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen (AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growth temperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface.Keywords
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