Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications
- 19 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 177 (1-2) , 1-5
- https://doi.org/10.1016/s0022-0248(96)01015-9
Abstract
No abstract availableKeywords
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