Selective epitaxial growth by molecular beam epitaxy
- 2 June 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (6) , 1011-1015
- https://doi.org/10.1088/0268-1242/8/6/007
Abstract
Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out. The diffusion length of Ga on SiO2 at 700 degrees is estimated to be about 20 to 30 mu m. The results demonstrate that selective epitaxial growth by MBE can be used as a device fabrication process where thin localized GaAs or InAs epilayers are required.Keywords
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