Selective area growth of GaAs by Electron-Cyclotron Resonance plasma-excited Molecular-Beam Epitaxy (ECR-MBE)
- 1 July 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (3) , 705-707
- https://doi.org/10.1016/0022-0248(89)90072-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Low-temperature selective growth of GaAs by alternately supplying molecular beam epitaxyJournal of Crystal Growth, 1989
- Selective epitaxial growth of gallium arsenide by molecular beam epitaxyApplied Physics Letters, 1987
- Selective growth of GaAs in the MOMBE and MOCVD systemsJournal of Crystal Growth, 1986
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- Structural analysis and optical characterization of low GaAs waveguides fabricated by selective epitaxyJournal of Crystal Growth, 1985
- Selective area growth of gallium arsenide by metalorganic vapor phase epitaxyApplied Physics Letters, 1984
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984
- GaAs planar technology by molecular beam epitaxy (MBE)Journal of Applied Physics, 1975