Substrate temperature lowering in GaAs selective epitaxial growth by molecular-beam epitaxy
- 1 October 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (7) , 3413-3415
- https://doi.org/10.1063/1.344094
Abstract
GaAs selective epitaxial growth by molecular‐beam epitaxy (MBE) was studied as a function of substrate temperature. Selectivity was observed at as low as 600 °C with 1×10−5 Torr As pressure and a 0.04 μm/h growth rate. The heterogeneous nucleation theory gives a good explanation for the selectivity dependence on substrate temperature. Selective epitaxial growth by MBE is promising for device applications which require thin localized epilayers.This publication has 11 references indexed in Scilit:
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