Selective Growth of InGaAs/InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation

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Abstract
Selective gas source molecular beam epitaxy (gas source MBE) growth of high-quality InGaAs/InP layers on mask-patterned InP substrates is demonstrated for the first time with atomic hydrogen irradiation. A decrease in polycrystalline density of over 3 orders of magnitude is achieved for InP selective growth by atomic hydrogen irradiation. The selective growth of high-quality InGaAs/InP multiple quantum-well (MQW) structures is also demonstrated. Photoluminescence (PL) spectroscopy indicates that the peak-wavelength of she MQW structure does not depend on the mask stripe width, but significant peak-wavelength dependence on the stripe spacing width was observed.