Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers
- 8 July 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (2) , 217-219
- https://doi.org/10.1063/1.1491612
Abstract
The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GaInAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadened transitions of a quantum-dot ensemble. Using this model, the optimum cavity design for a given gain function can be determined. Following this approach, quantum-dot lasers with low wavelength shifts of 0.16 nm/K were realized, which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser.Keywords
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