Recent progress in MOVPE for HEMT LSIs
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 30-34
- https://doi.org/10.1016/0022-0248(90)90335-i
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIJapanese Journal of Applied Physics, 1989
- MBE as a production technology for HEMT LSIsJournal of Crystal Growth, 1989
- A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactorJournal of Crystal Growth, 1988
- A new versatile, large size MOVPE reactorJournal of Crystal Growth, 1988
- Influence of surface defects on the characteristics of high electron mobility transistors grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- Uniform (Al)GaAs crystal growth and microwave HIFETs grown by barrel-reactor MOCVDJournal of Crystal Growth, 1988
- Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVDJapanese Journal of Applied Physics, 1987
- Growth of GaAs/AlGaAs quantum well structures using a large-scale MOCVD reactorJournal of Crystal Growth, 1986
- Large-scale MOVPE growth of GaAs and AlGaAs layersJournal of Crystal Growth, 1986
- Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor DepositionJournal of the Electrochemical Society, 1985