The role of hydrogen in current-induced degradation of carbon-doped GaAsAlGaAs heterojunction bipolar transistors

This publication has 21 references indexed in Scilit:

• Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP
  IEEE Transactions on Electron Devices, 1993
• High performance heterojunction bipolar transistors grown by molecular-beam epitaxy using novel growth method
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
• Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
  Japanese Journal of Applied Physics, 1992
• Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability
  IEEE Transactions on Electron Devices, 1992
• Time dependence of recombination-enhanced impurity diffusion in GaAs
  Applied Physics Letters, 1992
• Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors
  Japanese Journal of Applied Physics, 1992
• Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors
  Applied Physics Letters, 1991
• High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts
  IEEE Electron Device Letters, 1991
• Diffusion mechanisms and superlattice disordering in GaAs
  Materials Science and Engineering: B, 1988
• Degradation mechanism of Ti/Au and Ti/Pd/Au gate metallizations in GaAs MESFET's
  IEEE Transactions on Electron Devices, 1987