MOVPE growth of InPGaInAs and GaAsGaInP heterostructures for electronic transport applications
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 127-131
- https://doi.org/10.1016/s0022-0248(96)00519-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two-dimensional electron gas mobilitiesApplied Physics Letters, 1996
- 2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsineApplied Physics Letters, 1996
- Optimization of modulation-doped Ga1−xInxAs/InP heterostructures towards extremely high mobilitiesJournal of Applied Physics, 1993
- MBE growth and post-growth annealing of GaAs-based resonant tunneling structures, viewed in relation to interface roughnessJournal of Crystal Growth, 1991
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped StructuresJapanese Journal of Applied Physics, 1991
- Improved design of AlAs/GaAs resonant tunneling diodesApplied Physics Letters, 1990
- Investigations on resonant tunneling in III-V heterostructures: Comparison between experimental data and model calculationsJournal of Applied Physics, 1989
- Calculation of phonon-assisted tunneling and valley current in a double-barrier diodeApplied Physics Letters, 1989
- Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAsApplied Physics Letters, 1989
- Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperaturesSemiconductor Science and Technology, 1989