Theoretical study of the piezoelectric effect on GaAs MESFETs on
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9) , 1580-1585
- https://doi.org/10.1109/16.34215
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Improvement in GaAs MESFET performance due to piezoelectric effectIEEE Transactions on Electron Devices, 1985
- Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistorIEEE Electron Device Letters, 1985
- Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristicsIEEE Transactions on Electron Devices, 1984
- Role of the piezoelectric effect in device uniformity of GaAs integrated circuitsApplied Physics Letters, 1984
- Large-signal modeling of GaAs MESFET operationIEEE Transactions on Electron Devices, 1983
- Orientation effect reduction through capless annealing of self-aligned planar GaAs Schottky barrier field-effect transistorsApplied Physics Letters, 1983
- Characterization of WSix/GaAs Schottky contactsApplied Physics Letters, 1983
- Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasersJournal of Applied Physics, 1979
- Two-dimensional numerical analysis of stability criteria of GaAs FET'sIEEE Transactions on Electron Devices, 1976
- Enhanced X-Ray Diffraction from Substrate Crystals Containing Discontinuous Surface FilmsJournal of Applied Physics, 1967