Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (12) , 603-605
- https://doi.org/10.1109/55.192858
Abstract
The characteristics of the front and back channels of 1- mu m-long SIMOX MOSFETs were measured before and after various types of periods of hot-electron stress, and a comparison between the induced degradations was made. The back channel degrades much more severely than the front channel for both partially depleted and fully depleted devices. Fully depleted MOSFETs (140-nm-thick) are favorably contrasted with partially depleted ones (300-nm-thick) as to their vulnerability to hot-carrier-induced damage. Although defects are always located at and/or near the interface of the stressed channel, they may influence the properties of the opposite channel (via interface coupling) in fully depleted MOSFETs.Keywords
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