Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations
- 30 June 2005
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 8 (1-3) , 131-135
- https://doi.org/10.1016/j.mssp.2004.09.057
Abstract
No abstract availableKeywords
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