Charge multiplication in Au-SiC (6H) Schottky junctions
- 1 November 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (11) , 4842-4844
- https://doi.org/10.1063/1.321514
Abstract
The avalanche multiplication rate for carriers in 6H polytype SiC has been determined from photocurrent data with the assumption of equal hole and electron rates. The optical‐phonon mean free path was determined by fitting to the Baraff theory to be λ=58 Å at 300 K. Avalanche breakdown voltages were in accord with Sze’s empirical prediction.This publication has 6 references indexed in Scilit:
- Ionization rate in GaAs determined from photomultiplication in a Schottky barrierJournal of Applied Physics, 1973
- Avalanche Breakdown in Epitaxial SiC p-n JunctionsJournal of Applied Physics, 1969
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968
- TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORSApplied Physics Letters, 1966
- Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and DiamondJournal of Applied Physics, 1964
- Electron Emission from Breakdown Regions in SiCJunctionsPhysical Review Letters, 1959