Thermally induced interface degradation in (100) and (111) Si/SiO2 analyzed by electron spin resonance
- 1 November 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (6) , 3108-3111
- https://doi.org/10.1116/1.590449
Abstract
No abstract availableKeywords
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