Criteria for stability in bistable electrical devices with S- or Z-shaped current voltage characteristic
- 15 December 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (12) , 7352-7357
- https://doi.org/10.1063/1.360384
Abstract
Electronic devices exhibiting bistability in the current‐voltage characteristics are considered from a unified viewpoint. We obtain simple relations for the stability of the different branches in the current‐voltage characteristics. Criteria for oscillatory instabilities are discussed, and special conclusions for elements with S‐ or Z‐shaped characteristics are drawn. The stabilization of the middle branch of the double‐barrier resonant‐tunneling diode in a circuit with effectively negative capacitance and negative resistance is derived in a simple way.This publication has 21 references indexed in Scilit:
- Spiking in an activator-inhibitor model for elements with S-shaped negative differential conductivityZeitschrift für Physik B Condensed Matter, 1994
- Multistability of the current-voltage characteristics in doped GaAs-AlAs superlatticesApplied Physics Letters, 1994
- Dynamical behavior in a quantum-dot structurePhysical Review B, 1994
- Spiking at vertical electrical transport in a heterostructure deviceSemiconductor Science and Technology, 1994
- Oscillatory instability in the heterostructure hot-electron diodeApplied Physics Letters, 1991
- The stability of the self-consistently determined current of a double-barrier resonant-tunneling diodeJournal of Applied Physics, 1991
- Nonlinear dynamics of breathing current filaments inn-GaAs andp-GeZeitschrift für Physik B Condensed Matter, 1990
- Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodesApplied Physics Letters, 1989
- Instabilities in Semiconductors Including Chaotic PhenomenaPhysica Scripta, 1989
- j-B characteristics of S-type in the presence of multivalued electron distribution between the equivalent valleys in SiJournal of Physics C: Solid State Physics, 1984