Determination of dopant and deep imperfection profiles in p-type CdTe by improved constant capacitance-voltage transient measurements
- 15 February 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (4) , 1340-1347
- https://doi.org/10.1063/1.338113
Abstract
By constant capacitance-voltage transient measurements we are able to determine the dopant and deep imperfection density versus distance profiles, regardless of either the absolute density of imperfection levels, or their density relative to the dopant density. The data analysis of the method is similar to the well-known capacitance versus voltage measurement, which is very convenient compared to other imperfection profiling methods.This publication has 22 references indexed in Scilit:
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