Formation of a 100-µm-wide Stepfree GaAs (111)B Surface Obtained by Finite Area Metalorganic Vapor Phase Epitaxy

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Abstract
To perfectly flatten crystal facets, we propose a procedure that utilizes the balance between growth-material supply and desorption. By the suppression of two dimensional nucleation due to this desorption balance, stepfree facets can be obtained however large their area becomes, as long as their size is finite. We also confirm the validity of this assumption by obtaining a 100-µm-wide atomically stepfree surface on a GaAs (111)B substrate by using metalorganic vapor phase epitaxy.