Deposition of tungsten films by pulsed excimer laser ablation technique

Abstract
Laser ablationdeposition technique using a KrF (248 nm) excimer laser has been employed to deposit W films on Si(100) and SiO2 from W(CO)6 with high growth rate. The influence of substrate temperature on the film growth rate and resistivity has been investigated in a broad temperature range (20–500 °C) at laser fluence of 0.4 J cm−2. Filmresistivities within a factor of 3 of the bulk value have been observed in the substrate temperature range of 300–500 °C. The crystal structure of the filmdeposited in this temperature range corresponds specifically to the α‐W phase. Optical emissions from the plasma generated during the pulsed excimer laser ablation of W(CO)6 are also examined by an optical multichannel analyzer.