Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates
- 1 June 1997
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (6) , 515-523
- https://doi.org/10.1007/s11664-997-0187-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe qualityJournal of Electronic Materials, 1996
- The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substratesJournal of Electronic Materials, 1995
- Overview of compositional measurement techniques for HgCdTe with emphasis on IR transmission, energy dispersive X-ray analysis and optical reflectanceSemiconductor Science and Technology, 1993
- X-Ray TopographyMRS Proceedings, 1993
- Optical techniques for composition measurement of bulk and thin-film Cd1−yZnyTeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- New defect etchants for CdTe and Hg1-xCdxTeJournal of Crystal Growth, 1990
- Comment on misfit dislocations in abrupt Hg1−xCdxTe heterojunctionsJournal of Vacuum Science & Technology A, 1984
- Observation of dislocations in cadmium telluride by cathodoluminescence microscopyApplied Physics Letters, 1979