High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

GaN self-assembled quantum dots (QDs) with high quality and high density have been grown by low-pressure metalorganic chemical vapor deposition under very low V/III ratios. In depositing over a critical thickness of four monolayer GaN, we observed a transition from two-dimensional to three-dimensional growth mode. The density of the QDs could be changed between ${10}^9$ and ${10}^{10}\hspace{0.17em}{\mathrm{cm}}^{\text{−2}}.$ The typical diameter and height of the QDs were 20 and 2 nm, respectively. The size of the QDs was controlled to a considerable extent by changing the growth temperature and V/III ratio. Moreover, we observed two photoluminescence peaks from both the QDs and the wetting layer at room temperature. This result clearly demonstrates that the GaN QDs were formed with the Stranski–Krastanow growth mode.