Ultraviolet GaN Single Quantum Well Laser Diodes

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Abstract
The ultraviolet laser diodes (LDs) whose active layers consisted of binary GaN were grown on epitaxially laterally overgrown GaN substrates by a metalorganic chemical vapor deposition method. For the first time, we observed the lasing emission from binary GaN active layer by current injection. The emission wavelength of GaN single quantum well LDs was 366.9 nm under pulsed current injection and 369.0 nm under continuos-wave (cw) operation at room temperature. The threshold current density and voltage of these LDs under the 25°C cw operation were 3.5 kA/cm2 and 4.6 V, respectively. The estimated lifetime was approximately 2000 h under 25°C cw operation at an output power of 2 mW.