High intensity luminescence from pulsed laser annealed europium implanted sapphire
- 10 October 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (15) , 1871-1873
- https://doi.org/10.1063/1.112871
Abstract
Sapphire samples (Al2O3) were implanted with 400‐keV ions at a dose of 1×1016 ions cm−2. A comparison was made between furnace annealing and pulsed laser annealing of the implanted samples. Furnace annealing to 1200 °C, followed by excimer laser anneals, resulted in an increase of the cathodoluminescence emission intensity of the implanted europium by a factor of ∼20. This enhanced intensity is ∼50 times that of the signal prior to any form annealing treatment. It is proposed that the laser anneals dissociate Eu related clusters. The Eu 622‐nm lifetime reached 1.53 ms compared with an original postimplant value of 0.14 ms.Keywords
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