Epitaxial Deposition of GaAs in the Ga(CH3)3-AsH3-H2 System (III) Heteroepitaxy on Isolating Substrates
- 1 January 1974
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 9 (5) , 477-483
- https://doi.org/10.1002/crat.19740090504
Abstract
Epitaxial growth of GaAs has been achieved on CaF2, α‐Al2O3 and spinel substrates. X‐ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in terms of supersaturation and its influence on nucleation and layer growth.Keywords
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