GeSi heterostructures by crystallization of amorphous layers
- 1 August 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 82 (4) , 347-356
- https://doi.org/10.1016/0040-6090(81)90478-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Crystallization of amorphous GeSi100− on SiO2Thin Solid Films, 1981
- Epitaxial growth of Si deposited on (100) SiApplied Physics Letters, 1980
- Crystallization in amorphous siliconJournal of Applied Physics, 1979
- Crystallization in amorphous germaniumJournal of Applied Physics, 1979
- Solid-state epitaxial growth of deposited Si filmsApplied Physics Letters, 1979
- Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiationApplied Physics Letters, 1978
- Electrical conductivity and crystallization in amorphous germaniumJournal of Non-Crystalline Solids, 1977
- Silicon on spinel: The interaction between deposition constituents and the substrate surfaceJournal of Crystal Growth, 1972
- Crystallization processes in a-Ge thin filmsJournal of Non-Crystalline Solids, 1972