Annealing behavior of Si implanted InP
- 1 May 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (9) , 4418-4421
- https://doi.org/10.1063/1.340186
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Implanted planar GaInAsP/InP hetero-bipolar transistorElectronics Letters, 1986
- Enhanced diffusion phenomena during rapid thermal annealing of preamorphized boron-implanted siliconPhysica Status Solidi (a), 1986
- Temperature Response of GaAs in a Rapid Thermal Annealing SystemJournal of the Electrochemical Society, 1986
- Diffusion phenomena and defect generation in rapidly annealed GaAsJournal of Applied Physics, 1985
- Rapid thermal annealing of Si implanted GaAs for power field-effect transistorsApplied Physics Letters, 1985
- Comparison of ion implanted Be and Cd as p-type dopants in Ga0.47In0.53AsJournal of Crystal Growth, 1984
- Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperatureJournal of Applied Physics, 1982
- Incorporation of Si in Liquid Phase Epitaxial InP LayersJournal of the Electrochemical Society, 1976