Diffusion phenomena and defect generation in rapidly annealed GaAs

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Abstract
A detailed study of transient thermal processing of S-doped epitaxial GaAs wafers, both with and without ion-implantation damage being present, has been performed. The average diffusivity of S is given for the temperature range 950–1050 °C, and is shown to be dependent on the position of any lattice damage present, the surface condition (capped or capless), and the annealing regime employed (thermal or rapid thermal). The mobility of the S-doped region is degraded by rapid annealing, and the extent of this degradation is a function of the experimental conditions employed. Implantation of Si (which occupies a Ga site) into S-doped n+ regions (S occupies an As site) failed to increase the electrical activity of the region above the often observed limit of 2×1018 cm−3.