Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4
- 1 May 1988
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (3) , 229-237
- https://doi.org/10.1007/bf02652183
Abstract
No abstract availableKeywords
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