Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interface
- 1 July 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 117 (3) , 173-190
- https://doi.org/10.1016/0040-6090(84)90285-2
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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