Laser-induced nucleation of crystals in amorphous Ge films
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 54, 302-307
- https://doi.org/10.1016/0169-4332(92)90060-b
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Solid state nucleation rate of Si and Ge near melting pointPhase Transitions, 1991
- Time-resolved TEM of laser-induced structural changes in GeTe filmsApplied Surface Science, 1990
- Laser-induced multiple phase transitions in GeTe films traced by time-resolved TEMApplied Surface Science, 1989
- Explosive crystallization in siliconJournal of Applied Physics, 1986
- Phenomenological Theory of Explosive Solid Phase Crystallization of Amorphous Silicon. II. Dynamical ProcessesPhysica Status Solidi (a), 1986
- Phenomenological theory of explosive solid phase crystallization of amorphous siliconPhysica Status Solidi (a), 1985
- Kinetics of Laser-Induced Crystallization of Amorphous Germanium FilmsPhysica Status Solidi (a), 1985
- Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in siliconApplied Physics Letters, 1982
- A calculation of the thermodynamic first order amorphous semiconductor to metallic liquid transition temperatureAIP Conference Proceedings, 1979
- The crystallization of amorphous germanium filmsJournal of Non-Crystalline Solids, 1976