In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (6) , 270-272
- https://doi.org/10.1109/55.55277
Abstract
The DC current-voltage characteristics of strained In/sub 0.25/Ga/sub 0.75/As/AlAs resonant tunneling diode (RTD) structures grown on GaAsKeywords
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