On the geometric component of charge-pumping current in MOSFETs
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (3) , 107-109
- https://doi.org/10.1109/55.215126
Abstract
A simple method of unambiguously determining the presence of any geometric component in a charge-pumping measurement by collecting this component at another node via a nearby junction is presented. With the method it has been possible to study the dependence of geometric components on device dimensions and various experimental conditions with unprecedented sensitivity. By effectively separating the two current contributions, this method can at the same time be used to reduce geometric components in the regular charge-pumping signal, thereby increasing the accuracy of the various implementations of the charge pumping (CP) technique.Keywords
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