Contributions to computer-aided interpretation of ion sputtering depth profiling
- 30 September 1994
- journal article
- research article
- Published by Elsevier in Spectrochimica Acta Part B: Atomic Spectroscopy
- Vol. 49 (11) , 1123-1145
- https://doi.org/10.1016/0584-8547(94)80097-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Measurement of the electric potential in silicon solar cells employing an electron-beam testerAnalytical and Bioanalytical Chemistry, 1991
- Quantification of sputter depth profiles by means of wedge crater sputtering—a new technique for depth scale calibrationSurface and Interface Analysis, 1988
- Depth profiling on a sputtered bevel of sub-degree slope angleSurface and Interface Analysis, 1985
- On the influence of crater edges and neutral beam component on impurity profiles from raster scanning SIMSSurface and Interface Analysis, 1982
- Opticalin situ sputter rate measurements during ion sputteringSurface and Interface Analysis, 1982
- Crater edge profling of Ni/Cr sandwich multilayer thin films by scanning Auger microscopy (sam)Surface and Interface Analysis, 1980
- Sputtering of amorphous silicon films by 0.5 to 5 keV Ar+ ionsApplications of Surface Science, 1979
- Auger electron spectroscopy depth profiling of Ni/Cr multilayers by sputtering with N2+ ionsThin Solid Films, 1979
- Raster scanning depth profiling of layer structuresApplied Physics A, 1977
- Secondary ion emission for surface and in-depth analysis of tantalum thin filmsAnalytical Chemistry, 1973