Variation of the mobility and the two-dimensional electron gas concentration with indium composition in δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures
- 15 October 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (8) , 4332-4335
- https://doi.org/10.1063/1.349113
Abstract
The electron mobility and the two‐dimensional electron gas (2DEG) concentration in different indium compositions (0.1<xxGa1−xAs/GaAs pseudomorphic structures grown by low‐pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a δ‐doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm2/V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x=0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.This publication has 10 references indexed in Scilit:
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