Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment
- 1 November 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4775-4777
- https://doi.org/10.1063/1.341197
Abstract
Aluminium Schottky contacts on n‐Si were subjected to Ar+ ion bombardment, followed by a thermal anneal at 350 °C. This resulted in a marked improvement in the diode character of the implanted contacts. α‐particle channeling analysis showed that very little damage remained after annealing, while AES showed only slight mixing of the Al and Si.This publication has 8 references indexed in Scilit:
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