Microscopic carbon distribution in SiCalloys: A Raman scattering study
- 15 August 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 56 (7) , 3648-3650
- https://doi.org/10.1103/physrevb.56.3648
Abstract
SiC alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy. A comparison between the experimental Raman spectrum and the spectrum predicted from ab initio calculations shows that the carbon distribution in these samples is more randomized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.
Keywords
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