Influence of the Argon Pressure at dc Magnetron Sputtering on Contaminations in CrSi Thin Films
- 1 January 1992
- journal article
- research article
- Published by Wiley in Contributions to Plasma Physics
- Vol. 32 (6) , 623-636
- https://doi.org/10.1002/ctpp.2150320605
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Correlations between sputtering parameters, composition and resistivity of granular NbN filmsThin Solid Films, 1990
- Magnetron sputtering deposited AIN waveguides: effect of the structure on optical propertiesVacuum, 1990
- Kathodenzerstäubung und ihre Anwendung in der DünnschichttechnologieVakuum in Forschung und Praxis, 1990
- NbN thin films reactively sputtered with a high‐field direct‐current magnetronJournal of Vacuum Science & Technology A, 1988
- A spectroellipsometric investigation of the effect of argon partial pressure on sputtered palladium filmsJournal of Vacuum Science & Technology A, 1987
- Growth and properties of TiN and TiOxNy diffusion barriers in silicon on sapphire integrated circuitsThin Solid Films, 1987
- Influence of the nitrogen partial pressure on the properties of d.c.-sputtered titanium and titanium nitride filmsThin Solid Films, 1984
- Influence of substrate bias on the optical properties of amorphous hydrogenated silicon films prepared by sputteringPhilosophical Magazine Part B, 1983
- Studies of thin-film growth of sputtered hydrogenated amorphous siliconSolar Energy Materials, 1982
- Developments and trends in sputtering deposition techniquesThin Solid Films, 1976