Microcrystalline Silicon Films Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using Helium Gas
- 1 October 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (10A) , L1241-1244
- https://doi.org/10.1143/jjap.35.l1241
Abstract
We have investigated the growth of microcrystalline silicon films by electron cyclotron resonance plasma chemical vapor deposition (ECR-PCVD) using He as the ECR gas at substrate temperatures in the range of 180 to 550°C with He to silane ratios (He/SiH4) of 1, 4, and 9. With ratios of 4 and 9, the volume fractions of microcrystalline silicon increase with temperature and exceed 90% at 550°C. To study the role of He plasma, we prepared silicon films using a layer-by-layer technique and found that long exposure to He plasma changes the structure of amorphous silicon to microcrystalline.Keywords
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