Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 3 (1) , 64-71
- https://doi.org/10.1109/tcad.1984.1270058
Abstract
Monte Carlo methods are used to simulate implants. The results fall into two different groups. On one side, size-dependent effects due to the presence of the mask are analyzed and discussed. On the other side, physical mechanisms dependent on dose and energy, like channeling and transition crystal-amorphous, are briefly reviewed.Keywords
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