Differences in Light-Induced Photoluminescence Fatigue in a-Si:H between 300 K and 7 K
- 15 May 1990
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 59 (5) , 1733-1739
- https://doi.org/10.1143/jpsj.59.1733
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:HJournal of the Physics Society Japan, 1989
- Gap states and recombination processes in one-dimensionally ordered and disordered a-Si : H/a-Si1−xNx:H multilayer filmsJournal of Non-Crystalline Solids, 1987
- Dependence of the photoluminescence fatigue on the illumination temperature for a-Si :HSolid State Communications, 1987
- Light-induced metastable defects in a-Si:H as elucidated by optically detected magnetic resonance measurements at 2KSolid State Communications, 1987
- Photo‐Induced Metastable Effects in Hydrogenated Amorphous Silicon (a‐Si:H)Annalen der Physik, 1985
- Photoluminescence in hydrogenated amorphous siliconPhysical Review B, 1984
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1982
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1982
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980