Gas phase composition in the Ga-AsCl3-H2 system for epitaxial deposition of GaAs
- 31 May 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 9, 171-174
- https://doi.org/10.1016/0022-0248(71)90227-2
Abstract
No abstract availableKeywords
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