Enhanced protection of GaAs against thermal surface degradation by encapsulated annealing in an arsine ambient
- 1 July 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1) , 95-97
- https://doi.org/10.1063/1.94982
Abstract
This letter reports a technique of encapsulated annealing in an arsine ambient which is shown to provide better surface protection for GaAs against thermal degradation than either encapsulation alone or capless annealing in arsine.Keywords
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