Analytical Model for Circuit Simulation with Quarter Micron Metal Oxide Semiconductor Field Effect Transistors: Subthreshold Characteristics
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2279
- https://doi.org/10.1143/jjap.29.l2279
Abstract
For deep submicron MOSFETs short-channel effects dominate the transistor characteristics. This is due to the increase of the lateral electric field. This paper provides a new simple model which includes the gradient of the lateral electric field in an analytical way. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 µm effective channel length L eff with physical parameters (N sub, C ox, V fb, φf) taken from the long-channel device.Keywords
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